Bandgap Reference with inaccuracy of +0.64% in 16nm FinFET文章解读
接下来会参与到14nmFinFET电路设计；由于之前从事过14nmFinFET器件模型的工作，14nm对我来说不算是新工艺，不同的是，现在需要从电路设计者来考量问题。 该章节介绍了Sub-1v BandGap电路在16nmFinFET工艺实现的新方案。为了减少芯片面积，采用了40级Stack-Gate方式，并提出一种新的无面积损失的版图方式来实现该电路设计。本文
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